球王会买球下载-球王会(中国)-TM1FxxxxUXX-球王会买球下载-球王会(中国)

球王会买球下载-球王会(中国)

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TM1FxxxxUXX

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详细说明

SPI (Serial Peripheral Interface)NAND Flash provides an ultra-cost effective while high density non-volatile memory storage solution for embedded systems,based on an industry-standard NAND Flash memory core.It is an attractive alternative to SPI-NOR and standard parallel NAND Flash,with advanced features:

?Total pin count is 8,including VCC and GND

?Density 1/2/4Gb

?Superior write performance and cost per bit over SPI-NOR

?Significant low cost than parallel NAND

This low-pin-count NAND Flash memory follows the industry-standard serial peripheral interface,and always remains the same pin out from one density to another.The command sets resemble common SPI-NOR command sets,modified to handle NAND specific functions and added new features.SPI NAND is an easy-to-integrate NAND Flash memory,with specified designed features to ease host management:

?User-selectable internal ECC.ECC parity is generated internally during a page program operation.When a page is read to the cache register,the ECC parity is detected and corrects the errors when necessary.The device outputs corrected data and returns an ECC error status.

?Internal data move or copy back with internal ECC.The device can be easily refreshed and manage garbage collection task,without need of shift in and out of data.This command string can only be used on blocks with the same parity attribute.

?Power on Read with internal ECC.The device will automatically read first page of fist block to cache after power on,then host can directly read data from cache for easy boot.Also the data is promised correct by internal ECC when ECC enabled.

It is programmed and read in page-based operations,and erased in block-based operations.Data is transferred to or from the NAND Flash memory array,page by page,to a data register and a cache register.The cache register is closest to I/O control circuits and acts as a data buffer for the I/O data; the data register is closest to the memory array and acts as a data buffer for the NAND Flash memory array operation.The cache register functions as the buffer memory to enable page and random data READ/WRITE and copy back operations.These devices also use a SPI status register that reports the status of device operation.


球王会买球下载-球王会(中国)特性

◆1/2/4Gb SLC NAND Flash

◆Flash Size Flash size:1Gb/2Gb

Page size:(2048+128)byte

Block size:(128K+8K)byte

Flash size:4Gb:

Page size:(4096+256)byte, Block size:(256K+16K)byte

◆Standard,Dual,Quad SPI

-Standard SPI:SCLK,CS#,SI,SO,WP#,HOLD#

-Dual SPI:SCLK,CS#,SIO0,SIO1,WP#,HOLD#

-Quad SPI:SCLK,CS#,SIO0,SIO1,SIO2,SIO3

-3.3V:104MHz for fast read with 30pF load

-3.3V:Dual I/O Data transfer up to 208Mbits/s

-3.3V:Quad I/O Data transfer up to 416Mbits/s

◆Software/Hardware Write Protection

-Write protect all/portion of memory via software Register protection with WP#Pin

◆ Single Power Supply Voltage

-Full voltage range for 3.3V:2.7V ~3.6V

◆Advanced security Features

-10 page ,2K-Byte OTP Region

◆Program/Erase/Read Speed

-Page Program time:600us typical

-Cache Program time:20us minimum

-Block Erase time:3ms maximum

-Random page read time:280us typical

-Sequence page read/Cache read time:20us minimum

◆ Low Power Consumption

-30mA typical erase/program current

-10mA typical active current

-65uA typical standby current

-35uA typical deep power-down current

◆Enhanced access performance

-2Kbyte cache for fast random read

-Cache read and cache program

◆Temperature

-Operation:-40℃to 85℃

-Storage:-65℃ to 150℃

◆Reliability

-P/E cycles with ECC:100K

-Data retention:10 Years

◆Internal ECC(1)

-8bits/528byte



应用说明

球王会买球下载-球王会(中国)封装

球王会买球下载-球王会(中国)